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Freescale Semiconductor, Inc.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Document order number: MC33661 Rev 3.0, 10/2004
Advance Information LIN Enhanced Physical Interface
Local Interconnect Network (LIN) is a serial communication protocol designed to support automotive networks in conjunction with Controller Area Network (CAN). As the lowest level of a hierarchical network, LIN enables cost-effective communication with sensors and actuators when all the features of CAN are not required. The 33661 is a Physical Layer component dedicated to automotive LIN subbus applications. It offers slew rate selection for optimized operation at 10 kbps and 20 kbps, fast baud rate (above 100 kbps) for test and programming modes, excellent radiated emission performance, and safe behavior in the event of LIN bus short-to-ground or LIN bus leakage during low-power mode. Features * Operational from VSUP 6.0 V to 18 V DC, Functional up to 27 V DC, and Handles 40 V During Load Dump * Active Bus Waveshaping Offering Excellent Radiated Emission Performance * 5.0 kV ESD on LIN Bus Terminal * 30 k Internal Pullup Resistor * LIN Bus Short-to-Ground or High Leakage in Sleep Mode * -18 V to +40 V DC Voltage at LIN Terminal * 8.0 A Standby Current in Sleep Mode * Local and Remote Wake-Up Capability Reported by INH and RXD Terminals * 5.0 V and 3.3 V Compatible Digital Inputs Without Any External Components Required
33661
LIN INTERFACE
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D SUFFIX CASE 751-06 8-TERMINAL SOICN
ORDERING INFORMATION
Device MC33661D/R2 Temperature Range (TA) -40C to 125C Package 8 SOICN
33661 Simplified Application Diagram
VPWR
33661 WAKE VSUP INH 12.0 V / 5.0 V Regulator EN MCU RXD TXD LIN GND LIN Bus
This document contains certain information on a new product. Specifications and information herein are subject to change without notice. (c) Motorola, Inc. 2004
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VSUP
WAKE EN
INH Control
20 A
INH Control
RXD
30 k Receiver LIN
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TXD Slope Control GND
Figure 1. 33661 Simplified Internal Block Diagram
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RXD EN WAKE TXD
1 2 3 4
8 7 6 5
INH VSUP LIN GND
TERMINAL DEFINITIONS A functional description of each terminal can be found in the System/Application Information section beginning on page 13.
Terminal 1 Terminal Name RXD EN WAKE TXD INH VSUP LIN GND Formal Name Receiver Output Enable Control Wake Input Transmitter Input Inhibit Output Power Supply LIN Bus Ground Definition MCU interface that reports the state of the LIN bus voltage. Controls the operation mode of the interface. A high-voltage input used to wake up the device from sleep mode. MCU interface to control the state of the LIN output. This terminal can have two main functions: controlling an external switchable voltage regulator or driving a bus external resistor in the master node application. Device power supply terminal. Represents the single-wire bus transmitter and receiver. Device ground terminal.
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2 3 4 5 6 7 8
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MAXIMUM RATINGS All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device.
Ratings Symbol Value Unit
ELECTRICAL RATINGS
Power Supply Voltage Continuous Supply Voltage Transient Voltage (Load Dump) WAKE DC and Transient Voltage (Through a 33 k Serial Resistor) Logic Terminals (RXD, TXD, EN) LIN VWAKE VLOG VBUS -18 to 40 -150 to 100 VINH IINH VESD1 2000 5000 VESD2 200 V -0.3 to VSUP + 0.3 40 V mA V VSUP 27 40 -18 to 40 -0.3 to 5.5 V V V V
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DC Voltage Transient (Coupled Through 1.0 nF Capacitor) INH DC Voltage DC Current ESD Human Body Model (Note 1) All Terminals LIN Terminal with Respect to Ground ESD Machine Model (Note 2) All Terminals
THERMAL RATINGS
Operating Temperature Ambient Junction Storage Temperature Thermal Resistance Junction to Ambient Peak Package Reflow Temperature During Solder Mounting (Note 3) Thermal Shutdown Thermal Shutdown Hysteresis TA TJ TS RJA TSOLDER TSHUT THYST -40 to 125 -40 to 150 -40 to 150 150 240 150 to 200 8.0 to 20 C C/W C C C C
Notes 1. ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 ). 2. 3. ESD2 testing is performed in accordance with the Machine Model (CZAP = 220 pF, RZAP = 0 ). Terminal soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device.
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STATIC ELECTRICAL CHARACTERISTICS Characteristics noted under conditions 7.0 V VSUP 18 V, -40C TA 125C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
VSUP TERMINAL (DEVICE POWER SUPPLY)
Nominal DC Voltage Functional DC Voltage TA 25C Supply Current in Sleep Mode VSUP 13.5 V, Bus Recessive 13.5 V < VSUP < 18 V IS1 IS2 IS3 - - - 8.0 - 300 12 200 - mA IS(N-REC) IS(N-DOM) - - 4.0 6.0 6.0 8.0 VSUP VSUP 6.0 - - A 7.0 13.5 18.0 V V
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VSUP 13.5 V, Bus Dominant or Shorted to GND Supply Current in Normal, Slow or Fast Mode Bus Recessive, Excluding INH Output Current Bus Dominant, Total Bus Load >500 , Excluding INH Output Current
RXD OUTPUT TERMINAL (LOGIC)
Low-Level Voltage Output IIN 1.5 mA High-Level Voltage Output VEN = 5.0 V, IOUT 250 A VEN = 3.3 V, IOUT 250 A VOH 4.25 3.0 - - 5.25 3.5 VOL 0 - 0.9 V V
TXD INPUT TERMINAL (LOGIC)
Low-Level Voltage Input High-Level Voltage Input Input Threshold Hysteresis Pullup Current Source VEN = 5.0 V, 1.0 V < VTXD < 3.5 V VIL VIH VINHYST IS1 -60 -35 -20 - 2.5 100 - - 300 1.2 - 800 V V mV A
ENABLE INPUT TERMINAL (LOGIC)
Low-Level Voltage Input High-Level Voltage Input Input Threshold Hysteresis Low-Level Input Current VIN = 1.0 V High-Level Input Current VIN = 4.0 V IIH - 20 40 VIL VIH VINHYST IIL 5.0 20 30 A - 2.5 100 - - 300 1.2 - 800 V V mV A
LIN BUS TERMINAL (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE)
Low-Level Dominant Voltage External Bus Pullup 500 High-Level Voltage TXD High, IOUT = 1.0 A, Recessive State VLINhigh VSUP - 1.0 - - VLINlow - - 1.4 V V
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STATIC ELECTRICAL CHARACTERISTICS (continued) Characteristics noted under conditions 7.0 V VSUP 18 V, -40C TA 125C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
LIN BUS TERMINAL (VOLTAGE EXPRESSED VERSUS VSUP VOLTAGE) (continued)
Pullup Resistor to VSUP (Normal Mode) Pullup Current Source (Sleep Mode) Overcurrent Shutdown Threshold Overcurrent Shutdown Delay (Note 4) Leakage Current to GND Recessive State, 8.0 V VSUP 18 V, 8.0 V VLIN 18 V RPU IPU IOV-CUR IOV-DELAY IBUS-PAS-REC 0 IBUS no GND -1.0 IBUS - VLIN-VIL 0 VLIN-VIH 0.6 VSUP VLINTHRES 0.475 VLINHYST - VLINWU - - 0.5 0.175 - VSUP 0.5 0.525 VSUP - VSUP VSUP - 0.4 VSUP V 1.0 10 V - 1.0 A 3.0 20 mA 20 - 50 - 30 20 75 10 47 - 150 - k A mA s A
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GND Disconnected VGND = VSUP, VLIN at -18 V Leakage Current to GND VSUP Disconnected, VLIN at +18 V LIN Receiver VIL TXD High, RXD Low LIN Receiver VIH TXD High, RXD High LIN Receiver Threshold Center (VLIN-VIH - VLIN-VIL) / 2 LIN Receiver Input Hysteresis VLIN-VIH - VLIN-VIL LIN Wake-Up Threshold
INHIBIT OUTPUT TERMINAL
INH Driver ON Resistance (Normal Mode) Leakage Current (Sleep Mode) 0 < VINH < VSUP INHON ILEAK 0 - 5.0 - 35 70 A
WAKE TERMINAL
Typical Wake-Up Threshold (EN = 0 V, 7.0 V VSUP 18 V) (Note 5) HIGH-to-LOW Transition LOW-to-HIGH Transition Wake-Up Threshold Hysteresis WAKE Input Current V < 27 V VWUTHRESHL VWUTHRESLH VWUHYST IWIN1 - 1.0 5.0 0.3 VSUP 0.4 VSUP 0.1 VSUP 0.43 VSUP 0.55 VSUP 0.16 VSUP 0.55 VSUP 0.65 VSUP 0.2 VSUP V A V
Notes 4. This parameter is guaranteed by design; however, it is not production tested. 5. When VSUP > 18 V, the wake-up thresholds remain identical to the wake-up thresholds at 18 V.
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DYNAMIC ELECTRICAL CHARACTERISTICS Characteristics noted under conditions 7.0 V VSUP 18 V, -40C TA 125C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
LIN OUTPUT TIMING CHARACTERISTICS FOR NORMAL SLEW RATE
Dominant Propagation Delay TXD to LIN (Note 6) Measurement Threshold (50% TXD to 58.1% VSUP) Measurement Threshold (50% TXD to 28.4% VSUP) Recessive Propagation Delay TXD to LIN (Note 6) Measurement Threshold (50% TXD to 42.2% VSUP) Measurement Threshold (50% TXD to 74.4% VSUP) t REC (MIN) t REC (MAX) - - - - 50 50 s dt1 dt2 -10.44 -10.44 - - 8.12 8.12 t DOM (MIN) t DOM (MAX) - - - - 50 50 s s
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Propagation Delay Symmetry t DOM (MIN) to t REC (MAX) t DOM (MAX) to t REC (MIN)
LIN OUTPUT TIMING CHARACTERISTICS FOR SLOW SLEW RATE
Dominant Propagation Delay TXD to LIN (Note 6) Measurement Threshold (50% TXD to 61.6% VSUP) Measurement Threshold (50% TXD to 25.1% VSUP) Recessive Propagation Delay TXD to LIN (Note 6) Measurement Threshold (50% TXD to 38.9% VSUP) Measurement Threshold (50% TXD to 77.8% VSUP) Propagation Delay Symmetry t DOM (MIN) to t REC (MAX) t DOM (MAX) to t REC (MIN) dt1S dt 2S -21.88 -21.88 - - 17.44 17.44 t REC (MIN) t REC (MAX) - - - - 100 100 s t DOM (MIN) t DOM (MAX) - - - - 100 100 s s
LIN OUTPUT DRIVER FAST SLEW RATE
LIN Fast Slew Rate (Programming Mode) Fast Slew Rate dv/dt fast - 15 - V/s
LIN RECEIVER CHARACTERISTICS
Receiver Dominant Propagation Delay (Note 7) LIN LOW to RXD LOW Receiver Recessive Propagation Delay (Note 7) LIN HIGH to RXD HIGH Receiver Propagation Delay Symmetry t RL - t RH Notes 6. 7.0 V VSUP 18 V. Bus load R0 and C0: 1.0 nF/1.0 k, 6.8 nF/660 , 10 nF/500 . 7. Measured between LIN signal threshold LIN-VIL or LIN-VIH and 50% of RXD signal. t R-SYM -2.0 - 2.0 t RH - 3.5 6.0 s t RL - 3.5 6.0 s s
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DYNAMIC ELECTRICAL CHARACTERISTICS (continued) Characteristics noted under conditions 7.0 V VSUP 18 V, -40C TA 125C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
SLEEP MODE AND WAKE-UP TIMINGS
LIN Terminal Wake-Up Filter Time (LIN Bus Wake-Up) EN Terminal Wake-Up Time WAKE Terminal Filter Time Sleep Mode Delay EN HIGH to LOW t WUF t LWUE t WF t SD - t D_MS t D_COM 5.0 50 40 - - - - - s s 40 - 10 70 5.0 - 120 15 70 s s s s
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Delay Between EN and TXD for Mode Selection (Note 8) Delay Between First TXD after Device Mode Selection (Note 8) Notes 8. This parameter is guaranteed by design; however, it is not production tested.
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Timing Diagrams
VSUP
VSUP TXD LIN RXD GND R0 C0
Note R0 and C0: 1.0 k/1.0 nF, 660 /6.8 nF, and 500 /10 nF.
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Figure 2. Test Circuit for Timing Measurements
TXD Recessive State VREC LIN 58.1% VSUP t DOM(MIN) 40% VSUP 28.4% VSUP t DOM(MAX) t REC(MIN) RXD tRL tRH t REC(MAX) 74.4% VSUP 60% VSUP 42.2% VSUP
Figure 3. Timing Measurements for Normal Slew Rate
TXD Recessive State VREC LIN 61.6% VSUP t DOM(MIN) 40% VSUP 25.1% VSUP t REC(MAX) 77.8% VSUP 60% VSUP 38.9% VSUP
t DOM(MAX)
t REC(MIN) RXD t RL t RH
Figure 4. Timing Measurements for Slow Slew Rate
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Functional Diagrams
EN INH t LWUE TXD t D_MS LIN t D_COM LIN TXD t D_MS t D_COM EN INH t LWUE
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RXD
(High Z)
RXD (High Z)
Figure 5. EN Terminal Wake-Up and Normal Baud Rate Selection
Figure 8. EN Terminal Wake-Up and Slow Baud Rate Selection
WAKE t WF INH EN TXD
WAKE
t WF
INH EN TXD
t D_MS
t D_COM
LIN
t D_MS
t D_COM
LIN RXD (High Z)
RXD (High Z)
Figure 6. WAKE Terminal Wake-Up and Normal Baud Rate Selection
Figure 9. WAKE Terminal Wake-Up and Slow Baud Rate Selection
Wake-Up Frame 0.4 VSUP t WUF INH EN TXD
Wake-Up Frame LIN 0.4 VSUP tWUF INH EN TXD
LIN
t D_MS (High Z)
t D_COM RXD (High Z)
t D_MS
t D_COM
RXD
Figure 7. LIN Bus Wake-Up and Normal Baud Rate Selection
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Figure 10. LIN Bus Wake-Up and Slow Baud Rate Selection
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EN
EN = 1 and TXD = 1
EN
TXD EN = 0 and TXD = 1 t 1 (35 s)
t 2 (5.0 s) Toggle Reset to Previous Baud Rate
Figure 11. Fast Baud Rate Selection (Toggle Function)
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EN TXD (H)
Device in Communication Mode
Preparation to Sleep Mode t SD
Sleep Mode
Figure 12. Sleep Mode Enter
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Unpowered
TXD HIGH and EN LOW > t1 (35 s) TXD HIGH and EN LOW to HIGH Bus or WAKE terminal wake-up
Fast
Toggle function EN LOW for t 1 < 5.0 s, then HIGH
Sleep
Awake
TXD HIGH and EN LOW to HIGH
Normal
EN LOW for t 1 < 5.0 s, then HIGH EN LOW for t 1 < 5.0 s, then HIGH Toggle function
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TXD LOW and EN LOW to HIGH TXD LOW and EN LOW to HIGH
TXD HIGH
Wait Slow
Slow
TXD HIGH and EN LOW > t1 (35 s) EN LOW for t 1 < 5.0 s, then HIGH
Fast
Note See Table 1 for explanation of mode transitions. Figure 13. Mode Transitions
Table 1. Explanation of Mode Transitions
Mode Sleep Awake Normal Bus Recessive state, driver off. 20 A pullup current source. Recessive state, driver off. 30 k pullup active. Driver active. 30 k pullup active. Slew rate normal (20 kbps). INH OFF ON ON EN LOW LOW HIGH TXD X X HIGH to enter normal mode. Once in normal mode: LOW to drive bus in dominant, HIGH to drive bus in recessive. LOW LOW to enter slow mode. Once in slow mode: LOW to drive bus in dominant, HIGH to drive bus in recessive. LOW to drive bus in dominant, HIGH to drive bus in recessive. RXD High impedance. HIGH if external pullup to VDD. Low. If external pullup, HIGH-toLOW transition reports wake-up. Report bus level: * Low bus dominant * High bus recessive HIGH Report bus level: * Low bus dominant * High bus recessive Report bus level: * Low bus dominant * High bus recessive
Wait Slow Slow
Recessive state. Driver off. 30 k pullup active. Driver active. 30 k pullup active. Slew rate slow (10 kbps).
ON ON
HIGH HIGH
Fast
Driver active. 30 k pullup active. Slew rate slow (> 100 kbps).
ON
HIGH
X = Don't care.
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SYSTEM/APPLICATION INFORMATION
INTRODUCTION
The 33661 is a Physical Layer component dedicated to automotive LIN sub-bus applications. The 33661 features include slew rate selection for optimized operation at 10 kbps and 20 kbps, fast baud rate for test and programming modes, excellent radiated emission performance, and safe behavior in case of LIN bus short-to-ground or LIN bus leakage during low power mode. Digital inputs are 5.0 V and 3.3 V compatible without any external component required. The INH output may be used to control an external voltage regulator or to drive a LIN bus pullup resistor.
FUNCTIONAL TERMINAL DESCRIPTION
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VSUP Supply Terminal
The VSUP supply terminal is the power supply terminal for the 33661.
level at EN defines the VOH at RXD. The sleep mode is entered by setting EN LOW while TXD is HIGH. Sleep mode is active after the t1 filter time (see Figure 12, page 11).
LIN Bus Terminal
This I/O terminal represents the single-wire bus transmitter and receiver.
INH Output Terminal
The INH output terminal may have two main functions. It may be used to control an external switchable voltage regulator having an inhibit input. The high drive capability also allows it to drive the bus external resistor in the master node application. This is illustrated in Figures 16 and 17, page 17. In sleep mode, INH is turned OFF. If a voltage regulator inhibit input is connected to INH, the regulator will be disabled. If the master node pullup resistor is connected to INH, the pullup resistor will be disabled from the LIN bus.
TXD Input Terminal
The TXD input terminal is the MCU interface to control the state of the LIN output. When TXD is LOW, LIN output is LOW; when TXD is HIGH, the LIN output transistor is turned OFF. The threshold is 3.3 V and 5.0 V compatible. The baud rate selection (normal or slow mode) is done at device wake-up by the state of the TXD terminal prior to a HIGH level at the EN terminal (see Figures 5 through 10, page 10).
WAKE Input Terminal
The WAKE terminal is a high-voltage input used to wake up the device from the sleep mode. WAKE is usually connected to an external switch in the application. The typical wake thresholds are VSUP /2. The WAKE terminal has a special design structure and allows wake-up from both HIGH-to-LOW or LOW-to-HIGH transitions. When entering into sleep mode, the LIN monitors the state of the WAKE terminal and stores it as a reference state. The opposite state of this reference state will be the wake-up event used by the device to enter again into normal mode. An internal filter is implemented (40 s typical filtering time delay). WAKE terminal input structure exhibits a high impedance, with extremely low input current when voltage at this terminal is below 14 V. When voltage at the WAKE terminal exceeds 14 V, input current starts to sink into the device. A serial resistor should be inserted in order to limit the input current mainly during transient pulses. Recommended resistor value is 33 k. Important The WAKE terminal should not be left open. If the wake-up function is not used, WAKE should be connected to ground to avoid false wake-up.
RXD Output Terminal
The RXD output terminal is the MCU interface, which reports the state of the LIN bus voltage. LIN HIGH (recessive) is reported by a high voltage on RXD; LIN LOW (dominant) is reported by a low voltage on RXD. The RXD output structure is a CMOS-type push-pull output stage. The low level is fixed. The high level is dependant on the EN voltage. If EN is set at 3.3 V, RXD VOH is 3.3 V. If EN is set at 5.0 V, RXD VOH is 5.0 V. In the sleep mode, RXD is high impedance. When a wake-up event is recognized from WAKE terminal or from the LIN bus terminal, RXD is pulled LOW to report the wake-up event. An external pullup resistor may be needed.
EN Input Terminal
The EN input terminal controls the operation mode of the interface. If EN = 1, the interface is in normal mode, with transmission path from TXD to LIN and from LIN to RXD both active. The threshold is 3.3 V and 5.0 V compatible. The high
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OPERATIONAL MODES Introduction
The 33661 has two communication modes, transmitting and receiving modes, and two operational modes, normal and sleep. The normal mode is differentiated by the slew rate-- normal, slow, or fast--of the LIN output. Sleep Mode In the sleep mode, the transmission path is disabled and the 33661 is in low power mode. Supply current from VSUP is very low. Wake-up can occur from LIN bus activity from node internal wake-up through the EN terminal and from the WAKE input terminal. In the sleep mode, the 33661 has an internal 20 A pullup source to VSUP. This avoids the high current path from the battery to ground in the event the bus is shorted to ground. (Refer to succeeding paragraphs describing wake-up behavior.)
Operational Modes
Normal Mode In the normal mode, the 33661 has slew rate and timing compatible with the LIN protocol specification and can operate at 20 kbps. This mode is selected after sleep mode by setting the TXD terminal HIGH prior to setting EN from LOW to HIGH. Once normal mode is selected, it is impossible to select the slow mode unless the 33661 is set to sleep mode. Slow Mode In the slow mode, the slew rate is around half the normal slew rate, and bus speed operation is limited up to 10 kbps. The radiated emission is significantly reduced compared to the already excellent emission level of the normal mode. Slow mode is entered after sleep mode by setting the TXD terminal LOW prior to setting EN from LOW to HIGH. Once the slow mode is selected, it is impossible to select the normal mode unless the device is set to sleep mode. Fast Mode In the fast mode, the slew rate is around 10 times faster than the normal mode. This allows very fast data transmission (>100 kbps)--for instance, for ECU tests and microcontroller program download. The bus pullup resistor might be reduced to ensure a correct RC time constant in line with the high baud rate used. Fast mode is entered via a special sequence (call toggle function) at the TXD and EN terminals described in Figure 11 on page 11. Fast mode can be selected from either normal or slow mode. Once in fast mode, the toggle function will bring the device back in the previously selected mode (normal or slow). A glitch on EN will also reset the device to the previously selected mode (normal or slow) as shown in Figure 11 on page 11.
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Device Wake-Up Events
The 33661 can be awakened from sleep mode by three wake-up events: remote wake-up via LIN bus activity, internal node wake-up via the EN terminal, or toggling the WAKE terminal. Remote Wake from LIN Bus The LIN bus wake-up is recognized by a recessive-todominant transition, followed by a dominant level with a duration greater than 70 s, followed by a dominant-torecessive transition. This is illustrated in Figures 7 and 10 on page 10. Once the wake-up is detected, the 33661 enters the "awake" mode, with INH HIGH and RXD pulled LOW. Wake-Up from Internal Node Activity The 33661 can wake up by internal node activity through a LOW-to-HIGH transition of the EN terminal. When EN is switched from LOW to HIGH, the device is awakened and enters either the "normal" or the "wait slow" mode depending on the level of TXD input. The MCU must set the TXD terminal LOW or HIGH prior to waking up the device through the EN terminal. Wake-Up from WAKE Terminal If the WAKE input terminal is toggled, the 33661 enters the "awake" mode, with INH HIGH and RXD pulled LOW.
Device Power-Up
At power-up (VSUP rises from zero), the 33661 automatically switches in the "awake" mode. It switches the INH terminal to HIGH state and RXD to LOW state. The MCU of the application will then confirm normal or slow mode by setting the TXD and EN terminals appropriately.
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ELECTROMAGNETIC COMPATIBILITY INFORMATION Radiated Emission in Normal and Slow Modes
The 33661 has been tested for radiated emission performances. Figures 14 and 15 show the results in the frequency range 100 kHz to 2.0 MHz. Test conditions are in accordance with CISPR25 recommendations, bus length of 1.5 meter, device loaded with 10 nF and 500 bus impedance. Figure 14 displays the results when the device is set in the normal mode, optimized for baud rate up to 20 kbps. Figure 15 displays the results when the device is set in the slow mode, optimized for baud rate up to 10 kbps. The level of emissions is significantly reduced compared to the already excellent level of the normal mode.
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Figure 14. Radiated Emission in Normal Mode
Figure 15. Radiated Emission in Slow Mode
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APPLICATIONS Motorola Device Compatibility: 33661 and 33399
The two Motorola devices are terminal-to-terminal compatible. Table 2 summarizes the differences between the two devices. Table 2. Compatibility Comparison
Parameter Terminal Out and Package Baud Rate Operation INH Output 8-terminal SOICN. 2 baud rate operations: from 1.0 to 10 kbps and from 1.0 to 20 kbps. Capable of: * Controlling an external switchable voltage regulator. * Driving a bus master termination resistor. Identical to 33399. 5.0 V and 3.3 V compatible. In normal, slow, and fast mode, 30 k pullup. In sleep mode and bus short-to-ground, 20 A pullup. Typical 8.0 A. Normal, slow, fast, and sleep modes. Selected by TXD HIGH, then EN HIGH at device wake-up. Operation up to 20 kbps. Selected by TXD LOW, then EN HIGH at device wake-up. Operation up to 10 kbps. Selected by sequence at TXD and EN. Operation at baud rate >100 kbps. Recessive-to-dominant transition, followed by a dominant state of more than 70 s, followed by a dominant-torecessive transition. Three slew rates: Normal (20 kbps), Slow (10 kbps), and Fast (>100 kbps). Normal and slow mode selected by EN and TXD terminal sequence at device wake-up. The sequence to enter normal mode is the same for both the 33399 and 33661. If TXD is set HIGH and then EN is switched HIGH, the 33661 wakes up and the Normal Mode is selected. In this setup sequence, there is a direct compatibility between 33399 and 33661. The level of radiated emissions measured in identical configurations is lower for the 33661 compared to the 33399 in the normal mode, allowing operation up to 20 kbps. If the 33661 device is set to the slow mode, allowing operation up to 10 kbps, the radiated emission level is significantly reduced. 33661 8-terminal SOICN. 1 baud rate operation from 1.0 to 20 kbps. Capable of controlling an external switchable voltage regulator. Identical to 33661. 5.0 V compatible only. 30 k pullup in normal and sleep modes. Typical 20 A, maximum 50 A. Normal and sleep modes. Selected by TXD high and EN high at device wake-up. Operation up to 20 kbps. N/A N/A Dominant level, 50 s duration. 33399
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WAKE Terminal TXD, RXD, EN LIN Bus Termination Sleep Current Mode Normal Mode Slow Mode Fast Mode Sleep Mode and Bus Wake-Up Slew Rate
One slew rate: 20 kbps.
Wake-Up from Internal Node Activity (LOW to HIGH transition of EN) Radiated Emission
TXD must be set HIGH prior to setting EN HIGH in order to avoid having the device send a dominant level on the bus at wake-up. The level of radiated emissions measured in identical configurations is higher for the 33399 compared to the 33661 in the normal mode.
33661 16
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MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
Freescale Semiconductor, Inc.
Typical Applications
Figures 16 and 17 show typical applications of the 33661.
VBAT
33661
> 33 k External Switch VSUP WAKE EN VDD INH Control 20 A Master Node Pullup INH Control
I/O MCU VDD
Freescale Semiconductor, Inc...
*
RXD VDD
RXD Receiver
1.0 k 30 k LIN LIN Bus
VREG 12 V 5.0 V
(* optional)
TXD
TXD Slope Control GND
Figure 16. Master Node Typical Application
VBAT
33661
> 33 k External Switch VSUP WAKE EN VDD MCU VDD VREG 12 V 5.0 V INH TXD TXD Slope Control GND RXD VDD Control INH Control 20 A
I/O
INH
*
RXD Receiver
30 k LIN
LIN Bus
(* optional)
Figure 17. Slave Node Typical Application
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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33661 17
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
D SUFFIX 8-TERMINAL SOIC NARROW BODY PLASTIC PACKAGE CASE 751-06 ISSUE T
A
8
D
5
C
E
1 4
H
0.25
M
B
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0 7
Freescale Semiconductor, Inc...
h B C e A
SEATING PLANE
X 45
L 0.10 A1 B 0.25
M
CB
S
A
S
DIM A A1 B C D E e H h L
33661 18
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MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
For More Information On This Product, Go to: www.freescale.com
33661 19
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
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